Abstract
The heat and mass transfer in semiconductor, or oxide melts, significantly affect the quality - such as defects and impurity concentrations - of large crystals grown from the melts. This paper reviews the current understanding of convection of the melts, starting from the results of visualization using silicon melt, and continuing to the detailed numerical calculations needed for quantitative modeling of processing with solidification. Moreover, this paper reviews instability analysis of flow of the melts. The characteristics of flow of silicon and oxides are reviewed by focusing on the Coriolis force in the rotating melt. Based on geostrophic hydrodynamics, the origin of the flow structure is reviewed, and it is discussed whether flow is completely turbulent or has an ordered structure. Flow instability based on magnetic fields, is also reviewed. Moreover, convective instability of oxide melts is reviewed from the point of view of surface-tension-driven flow and magnetic field effect.
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