Abstract
The free convection in the melt during the crystal growth of small-gap semiconductors, and its influence on the electrical properties are discussed. Dimensionaless parameters of the fluid flow, electrical properties of PbTe, Pb1−x Sn x Te and Hg1−x Cd x Te single crystals, grown by vertical Bridgman technique at very low velocity, and some structures, found in these materials, support the presence of free convection.
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