Abstract

The vertical Bridgman (VB) technique developed for β-Ga2O3 crystals will be introduced including specific details on the VB crucible material determined by the measurement of the melting temperature of β-Ga2O3 and the VB growth processes of β-Ga2O3 in ambient air. The characteristic features of the crystallinity and the tentative electric characteristics of β-Ga2O3 crystals grown by the VB technique will also be introduced.

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