Abstract
The surface-electrode ion trap is one of the most promising devices to realize large-scale and integrated quantum information processing. However, a series of problems are faced in the micro-nano fabrication of surface-electrode ion traps. A prominent one is the difficulty to control the thick film surface roughness. A rough electrode surface could produce excessive radio frequency (RF) loss and deteriorate trapping ability of the surface-electrode ion trap. In this paper, a thick film micro-nano fabrication technology to control the surface roughness is presented, which can reduce the roughness of thick film surface-electrode down to 6.2 nm, while being controllable between 6.2 nm and 45 nm. Therefore, it can also provide a basis for studying the influence of electrode surface roughness on trap performance. The micro-nano fabrication technology is not only suitable for surface-electrode ion traps with various configurations, but also be further applied to researches of MEMS, solar cells and surface science.
Highlights
The trapped ion system is one of the candidates for realizing a quantum computer [1,2].The microfabricated traps are used to scale up [3], integrate [4] and miniaturize trapped ion system [5]
surface-electrode ion trap (SEIT) already has been widely applied to quantum simulation [8] and quantum information processing [9]
The research on the micro-nano fabrication process of thick film SEIT is based on a symmetrical five-wire SEIT (Figure 1a)
Summary
The microfabricated traps are used to scale up [3], integrate [4] and miniaturize trapped ion system [5] Both surface-electrode ion trap (SEIT) [6] and 3D microscopic ion trap [7] are microfabricated traps, while the structure and fabrication of SEIT are simpler. A well designed and fabricated SEIT should be able to trap ions steadily with a low heating rate, and shuttle ions without exciting their motional states [10]. Thick-film electrode allows a larger distance between the ions and the substrate, so the ion heating rate could be effectively suppressed, as the influence of the charged substrate on trapping ions is reduced [16]
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