Controlling shape memory effects in NiTi thin films grown on Ru seed layer

Abstract

NiTi thin films with robust shape memory effects and low deposition temperatures are greatly desired for microelectronic devices. However, sub-micron films deposited below 425 °C usually have amorphous structure and must be post-annealed to achieve full crystallization. In this article, using Ru as a seed layer, we demonstrate growth of NiTi films as thin as 120 nm with in-situ crystallization at 325 °C. NiTi thin films with a wide range of growth parameters including deposition temperature and film thickness were investigated. Shape memory effects were characterized using stress bow and resistivity studies. Structural information across the R-phase to austenite transformation was obtained using X-ray diffraction. NiTi thin films exhibited a narrow hysteresis during R-phase to austenite phase transition near 60 °C while possessing good shape memory properties.