Abstract
AbstractIn this article, we suggest a design method for an efficient inverse Class‐F 15 W Gallium Nitride (GaN) power amplifier (PA) that is minimally sensitive to the output parasitic capacitance. By utilizing the parasitic capacitance to control the bifurcated harmonic continuous mode parameters, the suggested design makes the power amplifier operate in continuous mode so that the output power and efficiency are maintained. Therefore, PA's performance degradation and uncertainty due to the parasitic component with its distribution values can be avoided or minimized. The implemented continuous inverse Class‐F mode PA demonstrated an output power of 42 dBm at 2.1 GHz, and an efficiency of more than 60% over 1.8 GHz to 2.4 GHz with a maximum efficiency of 71.9%.
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