Controlled p- and n-type doping of Fe2O3 nanobelt field effect transistors

Abstract

Pure α-Fe2O3 nanobelts are configured as field effect transistors and electrical transport studies demonstrate their n-type behavior. In order to control the electrical properties of the fabricated transistor, the nanobelt channels are doped with zinc. Depending on the doping condition, α-Fe2O3 nanobelts can be modified to either p-type or n-type with enhanced conductivity and electron mobility. Such behavior change is exhibited in the variation of the current-voltage (I-V) and I-Vg characteristics.