Abstract
This paper presents a successful unification of standard lithographic approaches (top down), anisotropic etching of atomically smooth surfaces, and controlled crystallization of silicon quantum dots (bottom up) to produce silicon nanoclusters at desired locations. These results, in combination with our previous demonstration of Si nanocrystal uniformity in size, shape, and crystallographic orientation, show strong potential for the application of silicon nanocrystals in electronic devices.
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