Abstract
Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe2 flakes via ozone (O3) exposure. The thickness of MoO x oxide film could be tuning with atomic-level accuracy simply by varying O3 exposure time. Additionally, MoO x-covered MoTe2 shows a hole-dominated transport behavior. Our findings point to a simple and effective strategy for growing homogeneous surface oxide film on MoTe2, which is promising for several purposes in metal-oxide-semiconductor transistor, ranging from surface passivation to dielectric layers.
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