Abstract
A challenge to this day in the development of diamond devices for quantum applications is the laterally defined and closely spaced positioning of nitrogen-vacancy centres with exceptional coherence properties. Here, we demonstrate a maskless, implantation-free method for the controlled in-plane positioning of NV centres using a combination of focused ion beam (FIB) milling, plasma etching and nitrogen-doped diamond growth. The Ga+ ion beam milling resulted in 1 μm × 1 μm cavities with depths of up to 450 nm, each cavity exhibiting the four [111]-oriented diamond facets after pure hydrogen plasma treatment and a depth of 700 nm. Low-methane, nitrogen-doped chemical vapour deposition (CVD) overgrowth resulted in in situ formation of oriented NV ensembles, exclusively perpendicular to the {111}-planes.
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