Abstract
Lateral epitaxial growth in vertical β-Ga2O3 nanowires was studied on sapphire substrates via metal organic chemical vapor deposition by controlling growth temperature and O2 flow rate. The lateral epitaxial growth rate of β-Ga2O3 rise up with increasing growth temperature and decreasing O2 flow rate, which are related to reaction kinetics and parasitic reaction, respectively. In addition, a growth model is proposed to explain the morphology of nanowires when growth condition changes. These results can provide important guidance on addressing slow coalescence rate of β-Ga2O3 nuclear islands on heterogeneous substrates and open new doors to β-Ga2O3 optoelectronic and electronic devices on cost-effective foreign substrates.
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