<title>High-quality LEO growth and characterization of GaN films on Al<formula><inf><roman>2</roman></inf></formula>O<formula><inf><roman>3</roman></inf></formula> and Si substrates</title>

Abstract

We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.