Abstract
The development of high-quality type II semiconductor heterostructures is crucial for solar energy conversion applications. Here, we report the sequential growth of MoS2/WSe2 two-dimensional semiconductor type II heterostructure using a one-step chemical vapor deposition. The morphological, Raman, and chemical analysis revealed that the WSe2 layer is deposited on the rhombus-shaped MoS2, forming a vertical MoS2/WSe2 heterostructure. The solar cell fabricated using the grown heterostructure exhibits a photovoltaic response with a conversion efficiency of 2.5 % and an open circuit voltage of 0.22 V, respectively. The numerical simulation study unravels the mechanism of charge separation and transport in the MoS2/WSe2 heterostructure solar cell.
Published Version
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