Abstract
Preferentially (001) and (110)-oriented PbZr0.52Ti0.48O3 (PZT) films with a LaNiO3 (LNO) bottom electrode were deposited on buffered Si (001) substrates using pulsed laser deposition. This high degree of control on growth orientation of these LNO and PZT thin films was achieved by using Ca2Nb3O10 (CNO) and Ti0.87O2 nanosheets as buffer layers deposited on the Si by the Langmuir–Blodgett technique. The measured remnant polarization (Pr) and piezoelectric response of the (001)-oriented PZT films on CNO-nanosheets are 16μC/cm2 and 120pm/V, respectively. These values are comparable to the values reported for the epitaxial PZT films grown on CeO2/yttria-stabilized zirconia (YSZ) buffered Si substrates while the maximum deposition temperature is lowered from 800°C to 600°C which are the typical deposition temperatures of YSZ and PZT respectively. This lower maximum deposition temperature shows that the integration of PZT films by the nanosheet buffer layers is not limited to Si, but can be extended to substrates with low processing temperatures like glass for various device applications in the future.
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