Abstract
Nanocrystalline MnAs magnetic clusters are formed controllably in GaAs by annealing Molecular Beam Epitaxial grown Ga1-xMnxAs (0.03 < x < 0.15). Magnetic and structural properties (cluster size, epitaxial registry) are addressed. The semiconductor matrix is defect free, and excellent control in cluster location is demonstrated. Semiconductor layers grown on top of a heterogeneous GaAs/MnAs clustered buffer show good optical properties.
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