Abstract
The novel in-situ electrochemical process for formation of metal-semiconductor interface, which have recently been developed by the authors group, is shown to form intimate Schottky contacts to the edges of two-dimensional electron gas (2DEG). Application of this process led to successful formation of novel Schottky in-plane-gate (IPG) controlled Aharonov-Bohm (A-B) electron interference device. Clear A-B interference effect was observed at 3.3 K.
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