Abstract
Indium nanoparticles were synthesized in a microwave flow reactor by thermal decomposition of trimethylindium. The particles were extracted from the gas phase by molecular beam sampling, deflected in an electric field, and deposited on a semiconductor surface. The size of the deposited particles was selected by adjusting the deflection voltage. The geometric standard deviation of the size-selected particles was found to be smaller than 10%. The deposition method is compatible with epitaxial growth methods and enhances their potentials with nanoparticle technology.
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