Abstract
This paper describes a systematic study of the deposition of a phase change material, GexSbyTez, using electrochemical atomic layer deposition (E-ALD). Cyclic voltammetry in aqueous solutions was used to investigate the deposition of atomic layers of Ge, Sb and Te. That data was used to develop initial E-ALD cycle conditions to form the binaries: SbxTey and GexTey. Films of the ternary material GexSbyTez, were then deposited with a wide range of compositions by alternating the binary cycles in various combinations. Conformal nanofilms were formed that exhibited good crystallinity.
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