Abstract
In this study, the resistive switching characteristics of aZrO2-based memory film with an embedded Mo layer are investigated. The experimental results showthat the forming process can be removed by inserting an embedded Mo metal layer withinZrO2 via apost-annealing process. The excellent memory performance, which includes lower operation voltage (<1.5 V), goodendurance (>103 cycles), a stubborn nondestructive readout property (>104 s), and longretention time (>107 s), is also demonstrated. Moreover, high-speed operation (10 ns) can be successively maintained over103 cycles without any operational errors observed in this memory device.Due to the interface layer induced by the Ti top electrode, the formationand rupture of conducting filaments are suggested to occur near theTi/ZrO2 interface. The oxygen vacancies induced by the embedded Mo can enhance theformation of conducting filaments and further improve the switching characteristics inZrO2-based devices.
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