Abstract
Flexible resistive switching device consisting of thin NiO film sandwiched between a flexible Cu foil substrate and Ti top electrode is proposed in this work. The Ti/NiO/Cu structure was fabricated by radio frequency magnetron sputtering deposition of a NiO film on the flexible Cu foil substrate. The fabricated device showed stable bipolar resistive switching behavior and its performance was not degraded upon different bending states. The Ti/NiO/Cu flexible device presented in our work has potential applications in the field of resistive switching random access memory (RRAM) devices.
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