Abstract
Surface morphology and controllable growth of C60 films on a semi‐metallic Bi(001)/Si(111) template surface were studied under ultra‐high vacuum conditions using scanning tunneling microscopy. Submonolayer, monolayer and thick layer coverage were imaged with atomic resolution. It is shown that the most favorable sites for C60 nucleation are domain boundaries and double steps whereas the surface with one monolayer coverage revealed a characteristic modulation pattern coming from the epitaxial relation between C60 and Bi unit cells.
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