Controllable cracking behavior in Si/Si0.70Ge0.30/Si heterostructure by tuning the H+ implantation energy

Abstract

Controllable cracking behaviors are realized in Si with a buried B doped Si0.70Ge0.30 interlayer by tuning the H+ projected ranges using the traditional H implantation technique. When the projected range is shallower (deeper) than the depth of the buried Si0.70Ge0.30 layer, cracking occurs at the interface between the top Si layer (bottom handle Si wafer) and the Si0.70Ge0.30 interlayer, thus resulting in the formation of continuous sharp crack confined at the Si0.70Ge0.30/Si interfaces. For the case that the H-ion projected range is located at the B-doped Si0.70Ge0.30 buried interlayer, continuous cracking is observed along the interlayer, which is similar to the conventional ion-cut method. We attribute these controlled cracking behaviors to the B doped Si0.70Ge0.30 interlayer, which holds a large amount of B impurities and compressive strain, and H ions can be trapped and confined at the interfaces or within the interlayer (depended on projected ranges) to facilitate the formation of cracks.