Control Plug Lateral Coupling Memory Cell Utilizing Uniform Channel Fowler–Nordheim Operation

Abstract

In this letter, we propose a control-plug (CP) structure logic nonvolatile memory (LNVM) fabricated by a standard logic CMOS process for mobile applications with low-power-consumption requirement. The operating concept of this cell is based on the use of a lateral capacitance coupling between a bar-type CP and a floating gate. Owing to the unique bar-type CP-coupling method and CP-sharing cell array structure, the novel cell has a coupling ratio of over 94% with the lowest fill factor of 344 as a Fowler-Nordheim (FN)-operated LNVM. Furthermore, because of the high coupling ratio and divided-bias operating method, this cell utilizes a uniform-channel FN tunneling program and erase method using a 3.3 V logic peripheral overdrive tolerable voltage of 5.5 V.