Abstract
For the achievement of microactuators based on piezoelectric thin films, a Pt/Ti/Si bottom electrode is widely used. This study presents the experimental results for Ti out-diffusion in Pt and Si for both sputtered Pt/Ti and Pt/TiO x electrodes. These results have been compared before and after a rapid thermal annealing (RTA). The diffusion has been characterized by secondary ion mass spectroscopy (SIMS) analysis using Cs + as a primary ion source. The Pt orientation has been observed by XRD measurements. Ti thin films (20 nm) have been sputtered in pure Ar whereas TiO x films have been obtained by reactive sputtering in a mixture of Ar/O 2 (90/10). Finally, the Pt (100 nm) has been sputtered without vacuum breaking. After RTA (400°C, 30 s, in N 2), the Pt film exhibited a (1 1 1) orientation for both Ti and TiO x adhesion films. The roughness of the Pt film measured by AFM with TiO x underlayer was 80% less than that of the Pt/Ti bi-layer. The TiO x film, as shown by SIMS analysis, has drastically reduced the diffusion of Ti in both Pt and Si. This phenomenon is accompanied by a very low Pt roughness. These results are analyzed in terms of diffusion and regrowth mechanisms inside the Pt film.
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