Abstract
Single crystal silicon and quartz wafers were seeded with colloidal TPA-silicalite-1 crystals. Hydrothermal treatment of the seeded substrates was used to grow dense MFI films. The preferred orientation of the crystals constituting the films as a function of the amount and size of seeds, film thickness and hydrothermal treatment conditions was investigated. In thin films, most of the crystalline material was found to be oriented with the b-axes close to perpendicular to the substrate surface. In thick films, the a- or c-axes were close to perpendicular to the substrate surface depending on the conditions used for hydrothermal treatment. The seed size and amount was found to affect the rate of change in preferred orientation as a function of film thickness. A film growth mechanism which is able to explain the experimental results is proposed.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call