Abstract
Multi-directional ion beam irradiation is applied to control the crystal orientation of Si thin films during growth via plasma-enhanced chemical vapor deposition. The primary ion beam is generated by electron cyclotron resonance using an SiH4/H2 mixture, and the auxiliary beam is obtained by redirecting a portion of the primary beam with a metal reflector. These two beams simultaneously hit the surface of the growing film from different directions. With this arrangement, we succeeded in controlling the orientation of the growth of deposited Si grains in virtually the same direction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
