Abstract
We have studied the work function modulation in pulsed laser deposited nonpolar MgO (100) and polar MgO (100) and LaAlO3 (100) insulating oxide films on Nb:SrTiO3 (100) and (111) substrates using Kelvin probe measurements. The work function modulation in MgO/Nb:SrTiO3 is ∼1 eV, which may be understood by the “electron compression model”, where the leaked-out electrons from Nb:SrTiO3 surface are pushed back by MgO layer, reducing the surface dipole moment. By forming double insulating top layer in LaAlO3/nondoped SrTiO3/Nb:SrTiO3 (100), we have realized the work function as low as ∼2.2 eV, which would be originated in the formation of high-density electrons at the LaAlO3/nondoped SrTiO3 interface and can be very close to the top surface. The present results demonstrate that chemically stable oxides can be used as low work function devices employing heterostructure form.
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