Abstract
The solid phase nucleation process of amorphous Si (a-Si) deposited by vacuum evaporation on thermally grown SiO2 layers on Si substrates having steps has been investigated. Steps were formed by either isotropic wet chemical etching of the SiO2 layer or anisotropic wet chemical etching of Si(100) followed by thermal oxidation. It has been found that solid phase nucleation is enhanced at the steps and that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3 µm from the step edge has been observed. n-channel MOSFET's (metal-oxide-semiconductor field-effect-transistor's) which had steps at the source/drain edge were fabricated. They showed channel electron mobility of about 200 cm2/V·s, which is approximately one order higher than that obtained from MOSFET's fabricated in Si films formed by solid phase crystallization on flat SiO2/Si substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.