Abstract
The possibilities of control of the electrophysical and mechanical properties of amorphous diamond-like silicon-carbon films by means of structural, chemical and structural-chemical modification are considered. The magnitude of the bias voltage and its frequency during the process of film synthesis, argon pressure in working chamber and precursors with different molecular structures are used as factors of structural modification. Introduction of transition metals with the concentration up to 30–35 at % into the film is used for chemical and structural-chemical modification. The high efficiency of control of the physical properties of films by the considered methods is shown.
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