Abstract
The possibilities of controlling the electrophysical and mechanical properties of amorphous diamond-like silicon-carbon films by the methods of structural, chemical and structural-chemical modification are considered. The factors of the structural modification were the bias voltage and its frequency during the synthesis of films, the argon pressure in the vacuum chamber, and precursors with different molecular structures. For chemical and structural-chemical modification, transition metals were introduced into the film with a concentration of up to 30 - 35 at. % The high efficiency of controlling the physical properties of the films by the considered methods is shown.
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