Abstract
Control of silicon carbide (SiC) polytype formation has been achieved. 3C, 2H, and 4H SiC heteroepitaxial films are fabricated on a sapphire (0001) substrate at a low temperature of 1100 °C using a pulsed-laser deposition (PLD) method. Images made by transmission electron microscopy clearly show that each film consists of a single polytype. The polytype of the SiC films can be changed by varying just two easily controlled parameters: the laser pulse frequency and the substrate temperature. These results suggest that precise control of growth conditions, which is essential for polymorphic materials, is possible using the PLD method.
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