Abstract
Using a pulsed-power inductively coupled plasma technique, etching characteristics for a SiO/sub 2/ film were investigated and applied to control the ferroelectric performance degradation induced by plasma etching when a ferroelectric capacitor structure is built to make a FeRAM device. It was found that the pulsed-power plasma helps to effectively suppress the degradation of the remanent polarization 2P/sub r/, an important ferroelectric parameter, compared with the conventional continuous wave plasma. The polarization degradation sensitivities were characterized as a function of the duty ratio and time-modulation frequency in the pulsed plasma mode and we observed a strong dependency of the polarization on the duty ratio. We also tried to understand how the plasma composition change in the pulsed-power mode is correlated with the electrical characteristics degradation of the ferroelectric capacitor by means of ion mass spectrometry.
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