Abstract
The continuous-feeding Czochralski method is a cost-effective method to grow single silicon crystals. An inner crucible is used to prevent the un-melted silicon feedstock from transferring to the melt-crystal interface in this method. A series of global simulations were carried out to investigate the impact of the inner crucible on the oxygen impurity distributions at the melt-crystal interface. The results indicate that, the inner crucible plays a more important role in affecting the O concentration at the melt-crystal interface than the outer crucible. It can prevent the oxygen impurities from being transported from the outer crucible wall effectively. Meanwhile, it also introduces as a new source of oxygen impurity in the melt, likely resulting in a high oxygen concentration zone under the melt-crystal interface. We proposed to enlarge the inner crucible diameter so that the oxygen concentration at the melt-crystal interface can be controlled at low levels.
Highlights
The continuous-feeding Czochralski method (CCZ) is an effective method to produce single crystals, especially for crystalline silicon (Si) [1,2]
To make clear which crucible is the dominant source of oxygen impurities transto the m-c interface in the double-crucible method, we investigated the impact of ported to the m-c interface in the double-crucible CCZ method, we investigated the impact the inner crucible and the outer crucible, respectively, on the O concentration at the m-c of the inner crucible and the outer crucible, respectively, on the O concentration at the minterface
Except for the case with an inner crucible diameter of 300 mm, as we have investigated in detail, global simulations of the thermal field and oxygen transport in the whole furnace were carried out for two cases with larger inner crucible diameters of 360 mm and 420 mm, respectively
Summary
The continuous-feeding Czochralski method (CCZ) is an effective method to produce single crystals, especially for crystalline silicon (Si) [1,2]. Continuous recharging of the melt allows for stable control of dopant [3], impurities, and resistivity distribution in a growing crystal, which helps to improve the crystal quality [4,5]. The CCZ grown crystal exhibits special defects, which are considered to be related to the relatively high hydrogen content of the recharged Si granules [6]. These defects lead to serious challenges in the application of CCZ single crystals of silicon in electronic devices
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