Abstract
A method to control negative ion density in SF6∕Ar capacitive discharges with a biased grid is proposed. It is observed that the negative ion density and its ratio to positive ion density are variable in a wide range from 2.8×107 to 4×109cm−3 and from 0.18 to 0.86, respectively, depending on the grid bias voltage. To investigate the effect of grid bias on negative ion generation, electron energy distribution functions (EEDFs) are measured and rate constants for electron attachment reactions are calculated at various bias voltages. Results are shown that the attachment processes are predominantly governed by the fraction of low energy electrons in the EEDF, which is controllable using the grid bias.
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