Abstract
Nano-dots array whose diameter and interval were approximately 200 nm and 750 nm, respectively, were made parallel to the atomic step edges on sapphire wafers by focused ion beam (FIB) system. Upon annealing a bunched multi-steps structure formed at regularintervals and straight because the steps were pinned at the nano-dots. The step heights andterrace widths were approximately 2.0 nm, 700 nm in off-angle 0.15° and 10.0 nm, 350 nm in off-angle 1.0°, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
