Abstract
This article discusses the application of reflection high energy electron diffraction (RHEED) to the control of growth by molecular beam epitaxy (MBE), metal-organic MBE (MOMBE) and chemical beam epitaxy (CBE). RHEED can be used to control the growth rate and composition for all three techniques. In addition, it has been used to control substrate temperature using changes in surface structure. It has also been used to obtain important information on the dynamics of the growth process. From this sort of data, a rather complete picture of the epitaxial process has been obtained. This has led to these UHV deposition techniques becoming the most important methods of growth for III-V compound semiconductor thin films.
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