Abstract
Considerable progress was made in the last years in utilizing reflection high energy electron diffraction (RHEED) intensity oscillations for determination of the growth rate and the composition in molecular beam epitaxial (MBE) growth of GaAs, AlGaAs and InGaAs. In this paper we report data from RHEED, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) to show that while such practice is now routine in MBE, it may not be applicable in chemical beam epitaxy (CBE), at least not in the case of CBE growth of In x Ga 1− x As on GaAs.
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