Abstract
Light emission from a ridge waveguide 1.3 μm InGaAsP/InP semiconductor laser pumped both electrically and optically was analyzed by polarization- and time-resolved measurements. The electric and the optical excitation was realized with a dc-bias current and with 150 ps pulses from a Q-switched Nd-YAG laser at 1.064 μm wavelength, respectively. The pump light was introduced into the InGaAsP/InP laser through a window opened in the substrate gold contact. The steady-state P–I characteristics of the semiconductor laser exhibited a transition from TM- to TE-polarized light emission if the injection current surpasses a certain value that depends on the heatsink temperature. Depending on the dc-bias current and the optical pulse power, a variety of different emission characteristics of the semiconductor laser were observed: pure TE or TM pulsations, in combination with a background cw emission in some cases; simultaneous emission of TE and TM pulses and switching between TM and TE emission states with switching times as short as 30 ps.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
