Control of III/VI Ratios in the Preparation of ln2Se3 thin Films

Abstract

CuInSe2 (CIS) thin films on glass substrates were successfully grown by the metal organic chemical vapour deposition method by using three precursors [Cu-precursor, trimethyl-indium (TMI) and hydrogen selenide (H2Se)]. The flow rates of TMI and H2Se can be adjusted independently to gain different lll/VI ratios, which is different from the single-precursor technique. Good chalcopyrite phase from CIS films was demonstrated by X-ray diffraction. The optical band gap of CIS thin films can be adjusted by controlling the growth conditions.