Control of growth mode in Mg-doped GaN/AlN heterostructure

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We investigated the effect of carrier gas on the growth mode of Mg-doped GaN on AlN layers. The growth mode of Mg-doped GaN strongly depends on the type of carrier gas used. In H2 carrier gas, Mg-doped GaN on AlN layers is grown in the shape of an island. In contrast, in N2 carrier gas, Mg-doped GaN on AlN layers shows a two-dimensional growth different from the initial growth mode. We observed that the type of carrier gas used has a significant impact on the electrical conductivity of Mg-doped GaN owing to the difference in surface flatness.