Abstract
Removal or control of Fermi level pinning is attempted using an ultrathin molecular beam epitaxy (MBE) Si interface control layer (Si ICL) for insulator-semiconductor (I-S) and metal-semiconductor (M-S) interfaces of GaAs and InGaAs. For successful removal of Fermi level pinning at the I-S interface, the Si ICL should maintain an ordered pseudomorphic structure. The optimum thickness of the Si ICL is about 10 Å. Formation of such a Si ICL alone does not remove pinning; subsequent deposition of a SiO2 film is necessary for unpinning. Pinning at the air-exposed surfaces can be removed by combining an HF surface treatment with the Si ICL technique. The Si ICL technique is promising for controlling barrier heights at M-S interfaces.
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