Abstract
We have grown n- and p-type β-FeSi 2 single crystals by the temperature gradient solution growth method using Sn–Ga solvent. The conduction type and the carrier density of the crystals were controlled by the Ga composition in the Sn–Ga solvent. The conduction type was changed from n- to p-type between the Ga composition of 10.2 and 18.5 at% in the solvent. Depending on the Ga composition in the solvent, the carrier density of n- and p-type crystals was changed from 1.5×10 17 to 3×10 17 cm −3 and 4×10 17 to 2×10 19 cm −3 , respectively. The activation energies of n-type crystals were 0.09– 0.11 eV while that of p-type crystals were 0.02– 0.03 eV .
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