Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature

Abstract

The full width at half maximum (FWHM), the sharpness of the Coulomb blockade oscillation in a single-hole transistor (SHT), has been controlled at room temperature by means of substrate capacitance control using substrate depletion and accumulation/inversion. When the substrate is depleted, the substrate capacitance is lower than when it is accumulated or inverted, resulting in a smaller FWHM. The SHT was fabricated on a thin buried oxide silicon-on-insulator substrate whose initial thickness was 10nm. Low temperature measurements have been performed on another SHT to support the results. The control of the sharpness in a single-charge transistor (SCT) may add further functionality to the SCT.