Abstract
Laser-induced etching of MnZn ferrite samples implanted with MeV ions has been investigated. The etching induced by Ar + -laser irradiation in a H 3PO 4 solution was completely suppressed by implanting 3 MeV Au + to a dose of 1 × 10 16 cm −2 when the laser-induced local temperature rise was below the melting point of the ferrite. The etching suppression disappeared when the Au + -implanted sample was thermally annealed at 900° C for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation. The decrease in surface magnetization induced by ion implantation can be recovered by thermal annealing at 900° C for 30 min.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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