Abstract
Abstract Previous work on pulsed laser ablation-deposition (PLAD) and sol-gel synthesis has shown that the crystallographic orientation of ferroelectric Pb(ZrxTi1−x)O3 (PZT) films and electrical properties of PZT-based capacitors is controlled by the substrate and/or bottom electrode material type. Similar control is obtainable with the ion beam sputter deposition method. Also, a non-ferroelectric phase that is nucleated during processing on RuO2/MgO substrates can be reduced or eliminated by interposing a layer of PbTiO3 (PT) between the electrode and the PZT film. The use of the PT layer and other proprietary modifications made to the RuO2 bottom electrode result in a substantial reduction in the fatigue of these PZT-based capacitors. The fatigue resistance and low dc leakage current of these capacitors qualify their use in non-volatile ferroelectric random access (FRAM) and dynamic random access (DRAM) memory devices.
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