Chapter 3 - Physical and Metallorganic Chemical Vapor Deposition of Ferroelectric Thin Films for Nonvolatile Memories

Abstract

This chapter reviews film synthesis techniques, including sputter deposition, laser ablation deposition, and metallorganic chemical vapor deposition (MOCVD). They represent the most utilized deposition methods in relation to the science and technology of ferroelectric thin films. These techniques can produce films with device-quality characteristics. However, various requirements are necessary for the application of film synthesis methods to manufacturable processes. Another major subfield of research related to the science and technology of ferroelectric thin films and hetero-structures involves the development of materials integration strategies to produce capacitors with memory-compatible properties and their integration with semiconductor devices to fabricate non-volatile-ferro-electric random access memory (NVFRAM). Therefore, another focus of this chapter is on materials integration strategies for the production of ferroelectric capacitors and their incorporation into semiconductor wafers for the fabrication of NVFRAMs. The extensive basic and applied research performed in the field of synthesis and characterization of ferroelectric thin films, particularly PZT and SBT, has advanced the materials science and the technology basis of these materials for application in the manufacturing of advanced film-based devices such as nonvolatile ferroelectric memories. Fatigue has been practically eliminated from PZT-based capacitors, using metal-oxide electrodes, while measurements of polarization retention have also yielded values compatible with a reliable operation of memories. Physical and chemical vapor deposition techniques, particularly plasma and ion beam sputter deposition, pulsed laser ablation deposition, and metallorganic chemical vapor deposition are at the forefront of the basic science related to the synthesis of multicomponent oxide thin films.