Abstract
AbstractCdSe quantum dots were grown on MgS barrier layers by migration enhanced epitaxy. Following depositon of CdSe at 240 °C, the layers were annealed at 320 °C. In this study the annealing time was varied along with a delay time introduced between the CdSe deposition and the high temperature anneal.By varying just these two parameters the CdSe dot density measured by AFM could be varied by one order of magnitude. A short growth delay of just one minute between deposition and annealing was particularly effective and gave the lowest CdSe dot density reported so far of ∼40 × 108cm–2. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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