Control of Convective Processes in a Melt for Growth of Doped Semiconductor Crystals with High Homogeneity of Properties

Abstract

Investigations of conditions for crystallization providing desirable modes of heat and mass transfer during terrestrial and space experiments have been carried out. They are necessary for semiconductor crystal growth with high homogeneity of properties using Ge doped with Ga. Mathematical simulation and experimental investigations of the influence of the intensity of convective flows on micro- and macrohomogeneity ofcrystals grown by the method of vertical directed crystallization have been carried out. It has been shown that, to achieve high homogeneity of crystal properties at growth under both terrestrial and space conditions, minimization of a radial temperature gradient and elimination of a free melt surface (Marangoni convection) are necessary.