Abstract
The effect of convective flows caused by the changing direction of the residual gravitational vector relative to the solidification front on the radial inhomogeneity (macrosegregation) of the dopant distribution in semiconductor crystals is studied within the context of mathematical and physical simulation for terrestrial and space conditions. Theoretical calculations and experimental research are carried out by the example of the growth of Ge crystals and their heavy doping with Ga (1019 сm–3). The velocities of convective flows near the solidification front which lead to radial macroinhomogeneity in the grown crystals are theoretically calculated. The requirements to obtain homogeneous semiconductor crystals under real microgravity conditions are formulated.
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