Control of analog ferroelectric states by small dc-bias in conjunction with fluctuating waveforms

Abstract

In this paper we demonstrate several possibilities to create and control partially switched analog states of ferroelectric materials, from measurements on PZT capacitors. By employing various types of fluctuating waveforms and controlling the domain dynamics with dc bias of small intensities, we have shown that it is possible to generate sequences of analog ferroelectric states that may appear identical from macroscopic measurements, yet they are unique at the local level. The experimental results have been analyzed theoretically by a simple microscopic model of switching. According to the model simulations, each analog state can be associated with a domain structure that captures subtle variations of the previously applied electric field as well as structural information about the inhomogeneities at the local level. The generation and control of such partially switched analog states may be important for new applications of ferroelectric materials to multi-value memories or in the field of artificial intelligence.